PART |
Description |
Maker |
2N5330 SDT99703 2N4211 2N5616 SDT8302 2N5625 SDT16 |
30 A, 90 V, NPN, Si, POWER TRANSISTOR 300 V, NPN, Si, POWER TRANSISTOR 20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 30 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66 5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-66 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-63 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-61 10 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-3
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SOLITRON DEVICES INC
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2N1080 2N5409 2N2202 2N4350 2N4242 2N3142 2N3141 2 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-53 TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-111 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-10 68HC11/Bidirectional-Compatible µP Reset Circuit TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-36 Open-Drain SOT µP Reset Circuit TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | CAN TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-53 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 5A I(C) | TO-5 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-210AC 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 60mA的一(c)|1 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 350MA I(C) | TO-5 晶体管|晶体管|叩| 40V的五(巴西)总裁| 350mA的一(c)| TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-1/4 晶体管|晶体管|叩| 50V五(巴西)总裁| 10A条一(c)|个STR - 1 / 4 Open-Drain SOT µP Reset Circuit
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Winbond Electronics, Corp.
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2N538 2N522 2N941 2N586 2N502A 2N795 2N738 2N779 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 8V V(BR)CEO | TO-5 TRANSISTOR | BJT | PNP | 8V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-9 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | TO-9 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 200MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | TO-18 晶体管|晶体管|叩| 50V五(巴西)总裁|8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 30V的五(巴西)总裁| 500mA的一(c)|
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Central Semiconductor, Corp. Microsemi, Corp.
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CE1A3Q CE1A3Q-T CE1A3Q-T-A |
2000 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR COMPOUND TRANSISTOR Hybrid transistor TRANS DIGITAL BJT NPN 70V 2000MA 3SP-8 T/R
|
NEC Corp. NEC[NEC] NEC Electronics
|
BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
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2SC5346 2SC5346S |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SC-71VAR 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
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Panasonic, Corp. Matsshita / Panasonic Panasonic Semiconductor
|
KTC1008 KTC1008GR KTC1008-15 |
EPITAXIAL PLANAR NPN TRANSISTOR General Purpose Transistor 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
KEC(Korea Electronics) Korea Electronics (KEC)
|
BUD7312 BUD7312-SMD |
3 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-251 3 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-252 From old datasheet system Silicon NPN High Voltage Switching Transistor
|
VISHAY TELEFUNKEN
|
ECG48 ECG52 ECG36 ECG36MP ECG37MCP ECG50 ECG47 ECG |
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 1A I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 12A I(C) | TO-3VAR TRANSISTOR | BJT | PAIR | NPN | 140V V(BR)CEO | 12A I(C) | TO-3VAR TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 140V V(BR)CEO | 12A I(C) | TO-3VAR 晶体管|晶体管|一对|互补| 140伏特五(巴西)总裁| 12A条一(c)|VAR TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|进步党| 100V的五(巴西)总裁|甲一(c)|02 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-92 TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 8A I(C) | TO-220AB
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Electronic Theatre Controls, Inc. Xilinx, Inc.
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2SB1516F5/NP 2SA1727F5/NP 2SD1918F5/NP 2SD1767T101 |
3000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR 0.7 A, 80 V, NPN, Si, POWER TRANSISTOR 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR 5 A, 20 V, PNP, Si, POWER TRANSISTOR 1 A, 32 V, NPN, Si, POWER TRANSISTOR 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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International Rectifier, Corp. Dielectric Laboratories, Inc.
|
PBSS303ND PBSS303ND115 |
60 V, 3 A NPN low VCEsat (BISS) transistor 603安NPN低饱和压BISS)晶体 60 V, 3 A NPN low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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NXP Semiconductors N.V.
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